This FAQ will look at a lesser-known but commercially available RAM technology called resistive random-access memory (RRAM) or ReRAM.
A research team has successfully developed halide perovskite-based memory with an ultra-fast switching speed. A research team led by Professor Jang-Sik Lee of Pohang University of Science and ...
Resistive Switching Memory Based on Thin-Film Design of Amorphous Hafnium Oxide (Cambridge & Others)
A technical paper titled “Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity” was published by researchers at University of Cambridge ...
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